Abstract: The Reaction-Diffusion-Drift model is validated as a trap generation framework during Bias Temperature Instability (BTI), Stress Induced Leakage Current (SILC), and Time Dependent Dielectric ...
Abstract: A novel comb-like-channel field-effect transistor (CombFET), which is the combination of the fin field-effect transistor (FinFET) and nanosheet FET (NshFET) geometries in the channel region, ...
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