At the eighth annual Samsung Mobile Solutions Forum held this week Samsung introduced their range of “smart and green” products particularly their line in mobile solutions took to the forefront of the ...

Using just two NAND or inverter gates its possible to build a D type (or ‘toggle’) flip-flop with a push-button input. At power-up the output of gate N2 is at a logical ‘1’, ensuring that transistor T2 ...

WDC gave keynote talks by Alper Ilkbahar and Siva Sivaram at the 2023 FMS. In the first talk they discussed their CMOS Bonded Array technology where they create separate wafers for the NAND flash ...

Tokyo-based Toshiba Corp and its Irvine, Calif.-based subsidiary Toshiba America Electronic Components this week detailed its 16-Gb NAND flash memory chip, manufactured on its 43-nm process technology ...

SAN JOSE, Calif.--(BUSINESS WIRE)--Solidigm [https://www.solidigmtechnology.com] launches today as a standalone U.S. subsidiary of South Korean semiconductor supplier SK hynix Inc. The new company’s ...

Micron has just announced a breakthrough in 3D NAND density, announcing that it has started shipments of the world's first 176-layer 3D NAND flash memory. This is Micron's 5 th generation 3D NAND ...

Samsung Electronics unveiled today at the 2007 Samsung Mobile Solution Forum in Taipei a new fusion NAND, Flex-OneNAND, 64GB solid-state disk (SSD) and a 8.4-megapixel CMOS image sensor. Some ...

This CMOS two-input combination NAND/NOR gate is a three-input, fourpin logic gate. A p-channel enhancementtype MOSFET (Q1) and an n-channel enhancement-type MOSFET (Q4) form one complementary ...

For the last year, the semiconductor industry has been in the midst of a boom cycle. But if you look close enough, there are mixed signals in the market, especially in memory. Still, it’s a banner ...

Check out more coverage of the 2022 Flash Memory Summit. Micron has started mass production of its most advanced triple-level-cell (TLC) 3D NAND chips made up of 232 layers of memory cells, pulling ...