The CRF-24010, a Class A/B 10-W silicon-carbide (SiC) MESFET, promises a minimum gain of 13 dB at 2 GHz, which is greater than 3 dB higher than previous SiC MESFETs. The device has a third-order ...
Offering excellent medium power performance, the NE722S01 GaAs MESFET is said to be ideal for use as an oscillator in digital LNBs, as well as second and third stage amplifiers in receiver designs ...
Offering performance advantages over silicon or GaAs devices, the CRF-35010 silicon carbide RF power MESFET has a gate threshold voltage of –10 Vdc, a gate quiescent voltage of –9 Vdc, and a ...
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